A huge collection of 3400+ free website templates JAR theme com WP themes and more at the biggest community-driven free web design site
Home / IEDM 2018 HDR and GS Papers Review

IEDM 2018 HDR and GS Papers Review

This year, IEDM had quite a lot of image sensor papers. Some of them talking about HDR and GS are briefly reviewed below:

1.5µm dual conversion gain, backside illuminated image sensor using stacked pixel level connections with 13ke- full-well capacitance and 0.8e- noise
V. C. Venezia, A. C-W Hsiung, K. Ai, X. Zhao, Zhiqiang Lin, Duli Mao, Armin Yazdani, Eric A. G. Webster, L. A. Grant, OmniVision Technologies

Omnivision presented two stacked designs with pixel-level interconnects. Design A has been selected as a more optimal from the DR point of view:


A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker Mitigation
S. Iida, Y. Sakano, T. Asatsuma, M. Takami, I. Yoshiba, N. Ohba, H. Mizuno, T. Oka, K. Yamaguchi, A. Suzuki, K. Suzuki, M. Yamada, M. Takizawa, Y. Tateshita, and K. Ohno, Sony Semiconductor

Sony presented its version of Big-Little PDs in a single pixel:


A 24.3Me- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging
M. Murata, R. Kuroda, Y. Fujihara, Y. Aoyagi, H. Shibata*, T. Shibaguchi*, Y. Kamata*, N. Miura*, N. Kuriyama*, and S. Sugawa, Tohoku University, *LAPIS Semiconductor Miyagi Co., Ltd.

Tohoku University and LAPIS present an evolution of their LOFIC pixel with deeply depleted PDs on 1e12 cm-3 doped substrate:


HDR 98dB 3.2µm Charge Domain Global Shutter CMOS Image Sensor (Invited)
A. Tournier, F. Roy, Y. Cazaux*, F. Lalanne, P. Malinge, M. Mcdonald, G. Monnot**, N. Roux**, STMicroelectronics, **CEA Leti, **STMicroelectronics

ST and Leti explain their dual memory pixel architecture:


High Performance 2.5um Global Shutter Pixel with New Designed Light-Pipe Structure
T. Yokoyama, M. Tsutsui,Y. Nishi, I. Mizuno, V. Dmitry, A. Lahav, TPSCo & TowerJazz

TowerJazz and TPSCo show their latest generation small GS pixel available for the foundry customers:


Back-Illuminated 2.74 µm-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e- Saturation Signal
Y. Kumagai, R. Yoshita, N. Osawa, H. Ikeda, K.Yamashita, T. Abe, S. Kudo, J. Yamane, T. Idekoba, S. Noudo, Y. Ono, S.Kunitake, M. Sato, N. Sato, T. Enomoto, K. Nakazawa, H. Mori, Y. Tateshita, and K. Ohno, Sony Semiconductor

Sony presented its approach to shielding the storage nodes in BSI GS sensor:

About Abdi

Check Also

Omnivision Expands its NIR-Enhanced Sensor Portfolio

PRNewswire: OmniVision announces the OS04A10, a 2.9um pixel sensor with 4MP resolution, the latest addition to its growing family of Nyxel NIR and ultra-low light (ULL) sensors. The OS04A10 with QE is 60% at 850nm and 40% at 940nm, said to be 3x to 5x ...

Leave a Reply

Your email address will not be published. Required fields are marked *